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| MCC Features * * * Low Forward Voltage Surface Mount device Very small conduction losses omponents 21201 Itasca Street Chatsworth !"# $ % !"# BAT54 THRU BAT54S 250mWatt, 30Volt Schottky Barrier Diode Type Single Dual Dual Dual Pin Configuration (See Page 3) MCC Catalog Number BAT54 BAT54A BAT54C BAT54S Device Marking L4P L42 L43 L44 Figure 1 Figure 2 Figure 3 Figure 4 SOT-23 A D C B Maximum Ratings Continuos Reverse Voltage Forward Current Non-Repetitive Peak Forward Current t<1s Total Power Dissipation @ TA = 25C Storage Temperature Range Junction Temperature Soldering temperature during 10s VR IF IFSM PD Tstg Tj Tj 30V 0.3A 1.0mA 250mW -55C to 150C 150C 260C G F E H J K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Electrical Characteristics @ 25 C Unless Otherwise Specified Ratings Forward Voltage at IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA Reverse Current Reverse Breakdown Voltage Capacitance Reverse Recovery Time Thermal Resistance, Junction to Ambient Symbol Max. 240mV 320mV 400mV 500mV 900mV 2.0 uA >30V 10pF 5nS 500K/W Notes VF DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout VR = 25V .035 .900 .031 .800 IR V(BR) CJ trr RJA Measured at 1.0MHz, VR=1.0V IF=IR=10mA; I(REC) = 1mA .037 .950 .037 .950 .079 2.000 inches mm www.mccsemi.com BAT54 thru BAT54S MCC Fig.2 : Average forward current versus ambient temperature ( = 1). 0.35 IF(av)(A) Fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 IF(av) (A) 0.00 0.00 0.05 0.10 0.15 0.20 =tp/T tp T = 0.1 = 0.05 = 0.2 = 0.5 0.30 0.25 =1 0.20 0.15 0.10 0.05 =tp/T T tp Tamb(C) 0.25 0.30 0.00 0 25 50 75 100 125 150 Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3 1.00 = 0.5 = 0.2 Ta=25C = 0.1 Ta=50C 0.10 T Single pulse Ta=100C t =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) =tp/T tp 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 www.mccsemi.com BAT54 thru BAT54S MCC Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+2 Tj=100C Fig.6 : Reverse leakage current versus junction temperature. IR(A) 1E+4 VR=30V 1E+3 1E+2 1E+1 1E+1 1E+0 1E-1 1E-2 Tj=50C 1E+0 Tj=25C 1E-1 VR(V) 0 5 10 15 20 25 30 Tj(C) 1E-2 0 25 50 75 100 125 150 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). C(pF) 10 F=1MHz Tj=25C Fig.8 : Forward voltage drop versus forward current (typical values). IFM(A) 5E-1 1E-1 Tj=100C 5 1E-2 Tj=50C 2 VR(V) 1 1 2 5 10 20 30 Tj=25C 1E-3 VFM(V) 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Pin Configuration - Top View 3 1 Figure 1 2 Figure 2 Figure 3 Figure 4 BAT54 BAT54A BAT54C BAT54S www.mccsemi.com |
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